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- Manufacturer No：IRF9358PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF9358PBF
- SKU：2707546
- Description：Mosfet Array 2 P-Channel (Dual) 30V 9.2A 2W Surface Mount 8-SO
User Guide
User Guide
IRF9358PBF Details
Mosfet Array 2 P-Channel (Dual) 30V 9.2A 2W Surface Mount 8-SO
IRF9358PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Max Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Part Status: Discontinued
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Series: HEXFET?
- Drain to Source Breakdown Voltage: -30V
- Turn On Delay Time: 5.7 ns
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Fall Time (Typ): 69 ns
- Vgs(th) (Max) @ Id: 2.4V @ 25μA
- Nominal Vgs: -1.8 V
- Resistance: 16.3mOhm
- Rds On (Max) @ Id, Vgs: 16.3m Ω @ 9.2A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Packaging: Tube
- REACH SVHC: No SVHC
- Element Configuration: Dual
- Length: 5mm
- Power Dissipation: 2W
- Drain to Source Voltage (Vdss): 30V
- Published: 2004
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Height: 1.5mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- FET Type: 2 P-Channel (Dual)
- Continuous Drain Current (ID): 9.2A
- Recovery Time: 83 ns
- Pulsed Drain Current-Max (IDM): 73A
- Rise Time: 7.2ns
- Turn-Off Delay Time: 146 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
- Base Part Number: IRF9358PBF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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