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IRFU5410
  • Manufacturer No:
    IRFU5410
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFU5410
  • SKU:
    2683979
  • Description:
    MOSFET P-CH 100V 13A I-PAK

IRFU5410 Details

MOSFET P-CH 100V 13A I-PAK

IRFU5410 Specification Parameters

  • Surface Mount: NO
  • Mounting Type: Through Hole
  • RoHS Status: Non-RoHS Compliant
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Drain to Source Voltage (Vdss): 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Series: HEXFET?
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Current - Continuous Drain (Id) @ 25°C: 13A Tc
  • Power Dissipation-Max: 66W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
  • Avalanche Energy Rating (Eas): 194 mJ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • DS Breakdown Voltage-Min: 100V
  • Transistor Element Material: SILICON
  • Drain Current-Max (Abs) (ID): 13A
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • JESD-30 Code: R-PSIP-T3
  • Pulsed Drain Current-Max (IDM): 52A
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Drain-source On Resistance-Max: 0.205Ohm
  • Additional Feature: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Rds On (Max) @ Id, Vgs: 205m Ω @ 7.8A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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