SPI100N03S2L03Infineon
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    SPI100N03S2L03
    • Manufacturer No：
      SPI100N03S2L03
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SPI100N03S2L03
    • SKU：
      2740124
    • Description：
      N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

    User Guide

    User Guide

    SPI100N03S2L03 Details

    N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

    SPI100N03S2L03 Specification Parameters

    • Surface Mount: NO
    • Mounting Type: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Reach Compliance Code: unknown
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • DS Breakdown Voltage-Min: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain Current-Max (Abs) (ID): 100A
    • Subcategory: FET General Purpose Power
    • JESD-30 Code: R-PSIP-T3
    • Series: OptiMOS?
    • Power Dissipation-Max: 300W Tc
    • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • RoHS Status: Non-RoHS Compliant
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • Published: 2003
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Pulsed Drain Current-Max (IDM): 400A
    • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
    • Vgs(th) (Max) @ Id: 2V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 100A Tc
    • Avalanche Energy Rating (Eas): 810 mJ
    • Drain-source On Resistance-Max: 0.0037Ohm
    • Rds On (Max) @ Id, Vgs: 3m Ω @ 80A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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