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SPS01N60C3123
  • Manufacturer No:
    SPS01N60C3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
    2736453
  • Description:
    N-Channel 650 V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3
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Inventory:39601
  • Qty Unit Price price
  • 1 $619.087 $619.087
  • 10 $612.957 $6129.57
  • 100 $606.888 $60688.8
  • 1000 $600.879 $600879
  • 10000 $594.929 $5949290

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SPS01N60C3
  • Manufacturer No:
    SPS01N60C3
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SPS01N60C3
  • SKU:
    2736453
  • Description:
    N-Channel 650 V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3

SPS01N60C3 Details

N-Channel 650 V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3

SPS01N60C3 Specification Parameters

  • Surface Mount: NO
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 800mA
  • Drain to Source Breakdown Voltage: 650V
  • Pulsed Drain Current-Max (IDM): 1.6A
  • Turn On Delay Time: 30 ns
  • Power Dissipation: 11W
  • Additional Feature: AVALANCHE RATED
  • Nominal Vgs: 3 V
  • Series: CoolMOS?
  • Avalanche Energy Rating (Eas): 20 mJ
  • Vgs(th) (Max) @ Id: 3.9V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Rds On (Max) @ Id, Vgs: 6 Ω @ 500mA, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Termination: Through Hole
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: Unknown
  • Published: 2005
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Dual Supply Voltage: 650V
  • Fall Time (Typ): 30 ns
  • Drain-source On Resistance-Max: 6Ohm
  • Rise Time: 25ns
  • Turn-Off Delay Time: 55 ns
  • Drain Current-Max (Abs) (ID): 0.8A
  • Package / Case: TO-251-3 Stub Leads, IPak
  • JEDEC-95 Code: TO-251AA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 800mA Tc
  • Power Dissipation-Max: 11W Tc

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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