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- Manufacturer No：MT48LC2M32B2P-5:J
- Manufacturer：Micron
- Category：Memory
- Datasheet：MT48LC2M32B2P-5:J
- SKU：3931717
- Description：EAR99 Surface Mount MT48LC2M32B2 Bulk ic memory 200MHz 4.5ns 22.22mm 64Mb
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MT48LC2M32B2P-5:J Details
EAR99 Surface Mount MT48LC2M32B2 Bulk ic memory 200MHz 4.5ns 22.22mm 64Mb
MT48LC2M32B2P-5:J Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2014
- Terminal Pitch: 0.5mm
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Clock Frequency: 200MHz
- Number of Pins: 86
- Data Bus Width: 32b
- Memory Format: DRAM
- Additional Feature: AUTO/SELF REFRESH
- Length: 22.22mm
- Sequential Burst Length: 1248FP
- HTS Code: 8542.32.00.02
- Access Time: 4.5ns
- Memory Size: 64Mb 2M x 32
- Base Part Number: MT48LC2M32B2
- Packaging: Bulk
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Operating Supply Voltage: 3.3V
- Terminal Finish: Matte Tin (Sn)
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Memory Width: 32
- Supply Voltage-Max (Vsup): 3.6V
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Terminations: 86
- Pin Count: 86
- I/O Type: COMMON
- Refresh Cycles: 4096
- Technology: SDRAM
- Interleaved Burst Length: 1248
- Density: 64 Mb
- Address Bus Width: 13b
- Package / Case: 86-TFSOP (0.400, 10.16mm Width)
- Organization: 2MX32
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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