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- Manufacturer No：MT41J128M8JP-15E AIT:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT41J128M8JP-15E AIT:G
- SKU：3926842
- Description：Obsolete 3-STATE 2014 AEC-Q100 ic memory -40C~95C TC 1.425V 1073741824bit 0.235mA
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MT41J128M8JP-15E AIT:G Details
Obsolete 3-STATE 2014 AEC-Q100 ic memory -40C~95C TC 1.425V 1073741824bit 0.235mA
MT41J128M8JP-15E AIT:G Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Interleaved Burst Length: 8
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Width: 8mm
- Power Supplies: 1.5V
- Screening Level: AEC-Q100
- Pin Count: 78
- I/O Type: COMMON
- Length: 11.5mm
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup): 1.425V
- Memory Density: 1073741824 bit
- Memory Size: 1Gb 128M x 8
- Package / Case: 78-TFBGA
- HTS Code: 8542.32.00.32
- JESD-30 Code: R-PBGA-B78
- Access Time (Max): 0.255 ns
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Memory Width: 8
- Sequential Burst Length: 8
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2014
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Supply Voltage: 1.5V
- Memory Type: Volatile
- Number of Terminations: 78
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Refresh Cycles: 8192
- Voltage - Supply: 1.425V~1.575V
- Supply Voltage-Max (Vsup): 1.575V
- Clock Frequency: 667MHz
- Operating Temperature: -40°C~95°C TC
- Technology: SDRAM - DDR3
- Organization: 128MX8
- Access Mode: MULTI BANK PAGE BURST
- Supply Current-Max: 0.235mA
- Base Part Number: MT41J128M8
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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