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MT41J512M8RH-093:E123
  • Manufacturer No:
    MT41J512M8RH-093:E
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
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  • SKU:
    3920859
  • Description:
    Obsolete 3-STATE 2014 BOTTOM ic memory 0C~95C TC 1.425V 4Gb 0.018A
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MT41J512M8RH-093:E
  • Manufacturer No:
    MT41J512M8RH-093:E
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    MT41J512M8RH-093:E
  • SKU:
    3920859
  • Description:
    Obsolete 3-STATE 2014 BOTTOM ic memory 0C~95C TC 1.425V 4Gb 0.018A

MT41J512M8RH-093:E Details

Obsolete 3-STATE 2014 BOTTOM ic memory 0C~95C TC 1.425V 4Gb 0.018A

MT41J512M8RH-093:E Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Number of Ports: 1
  • Lead Free: Lead Free
  • Memory Width: 8
  • Sequential Burst Length: 8
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Terminal Position: BOTTOM
  • Memory Interface: Parallel
  • JESD-609 Code: e1
  • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
  • Operating Supply Voltage: 1.5V
  • Data Bus Width: 8b
  • Number of Pins: 78
  • Memory Format: DRAM
  • Refresh Cycles: 8192
  • Voltage - Supply: 1.425V~1.575V
  • Supply Voltage-Max (Vsup): 1.575V
  • Address Bus Width: 19b
  • Standby Current-Max: 0.018A
  • Package / Case: 78-TFBGA
  • Organization: 512MX8
  • Clock Frequency: 1066MHz
  • Supply Current-Max: 0.282mA
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Interleaved Burst Length: 8
  • Packaging: Tray
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Published: 2014
  • Terminal Pitch: 0.8mm
  • Height Seated (Max): 1.2mm
  • Output Characteristics: 3-STATE
  • Supply Voltage: 1.5V
  • Memory Type: Volatile
  • Number of Terminations: 78
  • I/O Type: COMMON
  • Length: 10.5mm
  • Access Time: 20ns
  • Additional Feature: AUTO/SELF REFRESH
  • Supply Voltage-Min (Vsup): 1.425V
  • Operating Temperature: 0°C~95°C TC
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb 512M x 8
  • Density: 4 Gb
  • Base Part Number: MT41J512M8

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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