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- Manufacturer No：MT46H8M16LFBF-5:K
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46H8M16LFBF-5:K
- SKU：3920557
- Description：EAR99 Surface Mount MT46H8M16 Tray ic memory 200MHz 5ns 9mm 90mA
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MT46H8M16LFBF-5:K Details
EAR99 Surface Mount MT46H8M16 Tray ic memory 200MHz 5ns 9mm 90mA
MT46H8M16LFBF-5:K Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tray
- Published: 2012
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Height Seated (Max): 1mm
- Number of Pins: 60
- Pin Count: 60
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Length: 9mm
- Clock Frequency: 200MHz
- Data Bus Width: 16b
- Access Time: 5ns
- Write Cycle Time - Word, Page: 15ns
- Terminal Finish: TIN SILVER COPPER
- Supply Voltage-Max (Vsup): 1.95V
- Standby Current-Max: 0.00001A
- Address Bus Width: 14b
- Memory Size: 128Mb 8M x 16
- Organization: 8MX16
- Interleaved Burst Length: 24816
- Package / Case: 60-VFBGA
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Memory Width: 16
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Memory Format: DRAM
- Nominal Supply Current: 90mA
- Refresh Cycles: 4096
- Additional Feature: AUTO/SELF REFRESH
- Voltage - Supply: 1.7V~1.95V
- Density: 128 Mb
- HTS Code: 8542.32.00.02
- Technology: SDRAM - Mobile LPDDR
- Sequential Burst Length: 24816
- Base Part Number: MT46H8M16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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