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- Manufacturer No：BUK7575-100A,127
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK7575-100A,127
- SKU：3975059
- Description：MOSFET N-CH 100V 23A TO220AB
User Guide
User Guide
BUK7575-100A,127 Details
MOSFET N-CH 100V 23A TO220AB
BUK7575-100A,127 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Contact Plating: Tin
- Packaging: Tube
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Length: 6.35mm
- Height: 6.35mm
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 8 ns
- Power Dissipation: 99W
- Turn-Off Delay Time: 26 ns
- Series: TrenchMOS?
- Drain-source On Resistance-Max: 0.075Ohm
- Current - Continuous Drain (Id) @ 25°C: 23A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Max Dual Supply Voltage: 100V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 6.35mm
- Continuous Drain Current (ID): 200mA
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Weight: 4.535924g
- Fall Time (Typ): 24 ns
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Rise Time: 39 ns
- Pulsed Drain Current-Max (IDM): 92A
- Power Dissipation-Max: 99W Tc
- Rds On (Max) @ Id, Vgs: 75m Ω @ 13A, 10V
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