Add to like
Add to project list
NX7002BKMBYL123
  • Manufacturer No:
    NX7002BKMBYL
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
    3952518
  • Description:
    N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006B-3
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:30000
  • Qty Unit Price price
  • 1 $0.056 $0.056
  • 10 $0.055 $0.55
  • 100 $0.054 $5.4
  • 1000 $0.053 $53
  • 10000 $0.052 $520

Not the price you want? Send RFQ Now and we'll contact you ASAP

NX7002BKMBYL
  • Manufacturer No:
    NX7002BKMBYL
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NX7002BKMBYL
  • SKU:
    3952518
  • Description:
    N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006B-3

NX7002BKMBYL Details

N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006B-3

NX7002BKMBYL Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • DS Breakdown Voltage-Min: 60V
  • Transistor Element Material: SILICON
  • Terminal Form: NO LEAD
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 60V
  • Published: 2014
  • Terminal Position: BOTTOM
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 350mA
  • Case Connection: DRAIN
  • Series: TrenchMOS?
  • Package / Case: 3-XFDFN
  • Current - Continuous Drain (Id) @ 25°C: 350mA Ta
  • Rds On (Max) @ Id, Vgs: 2.8 Ω @ 200mA, 10V
  • Power Dissipation-Max: 350mW Ta 3.1W Tc

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via