PHN210T,118Nexperia USA Inc.
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    PHN210T,118123
    • Manufacturer No：
      PHN210T,118
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      3975793
    • Description：
      NEXPERIA - PHN210T,118 - MOSFET Transistor, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
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    PHN210T,118
    • Manufacturer No：
      PHN210T,118
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      PHN210T,118
    • SKU：
      3975793
    • Description：
      NEXPERIA - PHN210T,118 - MOSFET Transistor, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

    User Guide

    User Guide

    PHN210T,118 Details

    NEXPERIA - PHN210T,118 - MOSFET Transistor, Dual N Channel, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

    PHN210T,118 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • JESD-609 Code: e4
    • Number of Terminations: 8
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2010
    • Length: 5mm
    • Power Dissipation: 2W
    • Drain to Source Breakdown Voltage: 30V
    • Dual Supply Voltage: 30V
    • Width: 4mm
    • Transistor Application: SWITCHING
    • Height: 1.45mm
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 15 ns
    • Rise Time: 8 ns
    • Turn On Delay Time: 6 ns
    • FET Feature: Logic Level Gate
    • Nominal Vgs: 2 V
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Series: TrenchMOS?
    • Vgs(th) (Max) @ Id: 2.8V @ 1mA
    • Avalanche Energy Rating (Eas): 13 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
    • Number of Elements: 2
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Part Status: Obsolete
    • Number of Pins: 8
    • Pin Count: 8
    • Termination: SMD/SMT
    • Factory Lead Time: 16 Weeks
    • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Max Dual Supply Voltage: 30V
    • Threshold Voltage: 2V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Mode: ENHANCEMENT MODE
    • Operating Temperature: -65°C~150°C TJ
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Continuous Drain Current (ID): 2.4A
    • Pulsed Drain Current-Max (IDM): 14A
    • Drain Current-Max (Abs) (ID): 3.4A
    • FET Type: 2 N-Channel (Dual)
    • Turn-Off Delay Time: 21 ns
    • Drain-source On Resistance-Max: 0.1Ohm
    • JEDEC-95 Code: MS-012AA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
    • Rds On (Max) @ Id, Vgs: 100m Ω @ 2.2A, 10V
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