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HUF75339P3123
  • Manufacturer No:
    HUF75339P3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4142287
  • Description:
    UltraFET™ Tube Through Hole N-Channel Mosfet Transistor 75A Tc 75A 200W 25ns
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HUF75339P3
  • Manufacturer No:
    HUF75339P3
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    HUF75339P3
  • SKU:
    4142287
  • Description:
    UltraFET™ Tube Through Hole N-Channel Mosfet Transistor 75A Tc 75A 200W 25ns

HUF75339P3 Details

UltraFET™ Tube Through Hole N-Channel Mosfet Transistor 75A Tc 75A 200W 25ns

HUF75339P3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Factory Lead Time: 9 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Power Dissipation: 200W
  • Width: 4.83mm
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Breakdown Voltage: 55V
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 25 ns
  • Turn-Off Delay Time: 20 ns
  • Height: 9.4mm
  • Current Rating: 75A
  • Rise Time: 60ns
  • Current - Continuous Drain (Id) @ 25°C: 75A Tc
  • Weight: 1.8g
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Rds On (Max) @ Id, Vgs: 12m Ω @ 75A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2002
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Voltage - Rated DC: 55V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Turn On Delay Time: 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Length: 10.67mm
  • Continuous Drain Current (ID): 75A
  • Resistance: 12mOhm
  • Series: UltraFET?
  • Power Dissipation-Max: 200W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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