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- Manufacturer No：STB16NK65Z-S
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB16NK65Z-S
- SKU：4548616
- Description：MOSFET N-CH 650V 13A I2SPAK
User Guide
User Guide
STB16NK65Z-S Details
MOSFET N-CH 650V 13A I2SPAK
STB16NK65Z-S Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Reach Compliance Code: not_compliant
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Current Rating: 13A
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Voltage - Rated DC: 650V
- Vgs (Max): ±30V
- Additional Feature: AVALANCHE RATED
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Pulsed Drain Current-Max (IDM): 52A
- Turn-Off Delay Time: 68 ns
- Current - Continuous Drain (Id) @ 25°C: 13A Tc
- Power Dissipation-Max: 190W Tc
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
- Rds On (Max) @ Id, Vgs: 500m Ω @ 6.5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- JESD-609 Code: e3
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Continuous Drain Current (ID): 13A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Drain to Source Breakdown Voltage: 650V
- Rise Time: 25ns
- JESD-30 Code: R-PSIP-T3
- Fall Time (Typ): 17 ns
- Resistance: 380mOhm
- Power Dissipation: 190W
- Series: SuperMESH?
- Vgs(th) (Max) @ Id: 4.5V @ 100μA
- Avalanche Energy Rating (Eas): 350 mJ
- Base Part Number: STB16N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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