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- Manufacturer No：STD3NK60ZD
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD3NK60ZD
- SKU：4533074
- Description：MOSFET N-CH 600V 2.4A DPAK
User Guide
User Guide
STD3NK60ZD Details
MOSFET N-CH 600V 2.4A DPAK
STD3NK60ZD Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Number of Pins: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID): 2.4A
- Turn-Off Delay Time: 19 ns
- Rise Time: 14ns
- Power Dissipation-Max: 45W Tc
- Avalanche Energy Rating (Eas): 150 mJ
- Base Part Number: STD3N
- Rds On (Max) @ Id, Vgs: 3.6 Ω @ 1.2A, 10V
- Series: SuperFREDmesh?
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Part Status: Obsolete
- Pin Count: 3
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Fall Time (Typ): 14 ns
- Power Dissipation: 45W
- Pulsed Drain Current-Max (IDM): 9.6A
- Vgs(th) (Max) @ Id: 4.5V @ 50μA
- Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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