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STGW40NC60V123
  • Manufacturer No:
    STGW40NC60V
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
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  • SKU:
    4537456
  • Description:
    STMICROELECTRONICS STGW40NC60V IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, TO-247, 3 Pins
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  • 100 $11327.192 $1132719.2
  • 1000 $11215.041 $11215041
  • 10000 $11104 $111040000

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STGW40NC60V
  • Manufacturer No:
    STGW40NC60V
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    STGW40NC60V
  • SKU:
    4537456
  • Description:
    STMICROELECTRONICS STGW40NC60V IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, TO-247, 3 Pins

STGW40NC60V Details

STMICROELECTRONICS STGW40NC60V IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, TO-247, 3 Pins

STGW40NC60V Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Voltage - Rated DC: 600V
  • Collector Emitter Voltage (VCEO): 600V
  • Operating Temperature: -55°C~150°C TJ
  • Polarity/Channel Type: N-CHANNEL
  • Current - Collector Pulsed (Icm): 200A
  • Transistor Application: POWER CONTROL
  • Turn On Delay Time: 43 ns
  • Rise Time: 17ns
  • Max Power Dissipation: 260W
  • Turn On Time: 61 ns
  • Base Part Number: STGW40
  • Gate Charge: 214nC
  • Test Condition: 390V, 40A, 3.3 Ω, 15V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Gate-Emitter Thr Voltage-Max: 5V
  • Number of Terminations: 3
  • Pin Count: 3
  • Collector Emitter Saturation Voltage: 2.5V
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Collector Emitter Breakdown Voltage: 600V
  • Gate-Emitter Voltage-Max: 20V
  • Current Rating: 50A
  • Max Collector Current: 80A
  • Package / Case: TO-247-3
  • Subcategory: Insulated Gate BIP Transistors
  • Turn-Off Delay Time: 170 ns
  • Series: PowerMESH?
  • Power Dissipation: 260W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Turn Off Time-Nom (toff): 247 ns
  • Switching Energy: 330μJ (on), 720μJ (off)
  • Td (on/off) @ 25°C: 43ns/140ns

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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