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- Manufacturer No：S1J-E3/61T
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：S1J-E3/61T
- SKU：13125651
- Description：In a Pack of 100, Vishay 600V 1A, Silicon Junction Diode, 2-Pin DO-214AC S1J-E3/61T
User Guide
User Guide
S1J-E3/61T Details
In a Pack of 100, Vishay 600V 1A, Silicon Junction Diode, 2-Pin DO-214AC S1J-E3/61T
S1J-E3/61T Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Peak Reflow Temperature (Cel): 260
- Max Operating Temperature: 150°C
- Published: 2008
- Output Current: 1A
- Forward Current: 1A
- REACH SVHC: Unknown
- Diode Element Material: SILICON
- Diode Type: Standard
- Voltage: 600V
- Max Reverse Voltage (DC): 600V
- Reverse Voltage: 600V
- Width: 2.79mm
- HTS Code: 8541.10.00.80
- Package / Case: DO-214AC, SMA
- Max Forward Surge Current (Ifsm): 40A
- Terminal Form: C BEND
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Length: 4.4958mm
- Additional Feature: LOW LEAKAGE CURRENT
- Recovery Time: 1.8 μs
- Capacitance @ Vr, F: 12pF @ 4V 1MHz
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Terminal Position: DUAL
- Time@Peak Reflow Temperature-Max (s): 30
- Max Junction Temperature (Tj): 150°C
- Current Rating: 1A
- Average Rectified Current: 1A
- Current: 1A
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Operating Temperature - Junction: -55°C~150°C
- Voltage - Rated DC: 600V
- Max Repetitive Reverse Voltage (Vrrm): 600V
- Height: 2.29mm
- Peak Reverse Current: 1μA
- Capacitance: 12pF
- Max Surge Current: 40A
- Peak Non-Repetitive Surge Current: 40A
- Subcategory: Rectifier Diodes
- Forward Voltage: 1.1V
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Reverse Recovery Time: 1.8 μs
- Current - Reverse Leakage @ Vr: 1μA @ 600V
- Base Part Number: S1J
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