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- Manufacturer No：2N6661JTVP02
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N6661JTVP02
- SKU：149180
- Description：Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD
User Guide
User Guide
2N6661JTVP02 Details
Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD
2N6661JTVP02 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Published: 2016
- Reach Compliance Code: unknown
- Transistor Element Material: SILICON
- Terminal Position: BOTTOM
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drain to Source Voltage (Vdss): 90V
- HTS Code: 8541.21.00.95
- Subcategory: FET General Purpose Powers
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Drain Current-Max (Abs) (ID): 0.86A
- Power Dissipation-Max: 725mW Ta 6.25W Tc
- Additional Feature: LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Pin Count: 2
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pbfree Code: no
- Qualification Status: Not Qualified
- Terminal Form: WIRE
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max: 4Ohm
- DS Breakdown Voltage-Min: 90V
- Feedback Cap-Max (Crss): 10 pF
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Continuous Drain Current (ID): 860mA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Rds On (Max) @ Id, Vgs: 4 Ω @ 1A, 10V
- Current - Continuous Drain (Id) @ 25°C: 860mA Tc
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