IRC634PBF
Vishay Siliconix
RoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1ECCN Code
EAR99Lead Free
Lead FreePart Status
ObsoletePackaging
TubeQualification Status
Not QualifiedPeak Reflow Temperature (Cel)
260Number of Terminations
5Pin Count
5Reach Compliance Code
unknownVoltage - Rated DC
250VDrain to Source Breakdown Voltage
250VTime@Peak Reflow Temperature-Max (s)
40Drive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONConfiguration
SingleTerminal Position
SINGLEGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Published
1997Width
4.83mmTransistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEVgs (Max)
±20VCase Connection
DRAINVgs(th) (Max) @ Id
4V @ 250μAPulsed Drain Current-Max (IDM)
32ALength
10.67mmSeries
HEXFET?Height
9.02mmFall Time (Typ)
19 nsPackage / Case
TO-220-5Turn-Off Delay Time
42 nsWeight
3.000003gCurrent Rating
8.1AContinuous Drain Current (ID)
8.1AJESD-30 Code
R-PSFM-T5Turn On Delay Time
9.6 nsRise Time
21nsPower Dissipation
74WGate Charge (Qg) (Max) @ Vgs
41nC @ 10VDrain-source On Resistance-Max
0.45OhmPower Dissipation-Max
74W TcFET Feature
Current SensingInput Capacitance (Ciss) (Max) @ Vds
770pF @ 25VCurrent - Continuous Drain (Id) @ 25°C
8.1A Tc