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- Manufacturer No：IRC640PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRC640PBF
- SKU：206422
- Description：Trans MOSFET N-CH 200V 18A 5-Pin(5+Tab) TO-220
User Guide
User Guide
IRC640PBF Details
Trans MOSFET N-CH 200V 18A 5-Pin(5+Tab) TO-220
IRC640PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Packaging: Tube
- Peak Reflow Temperature (Cel): 260
- Pin Count: 5
- DS Breakdown Voltage-Min: 200V
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Continuous Drain Current (ID): 18A
- Series: HEXFET?
- Turn On Delay Time: 14 ns
- Package / Case: TO-220-5
- Weight: 3.000003g
- Power Dissipation-Max: 125W Tc
- JESD-30 Code: R-PSFM-T5
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- FET Feature: Current Sensing
- Avalanche Energy Rating (Eas): 430 mJ
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Part Status: Obsolete
- Qualification Status: Not Qualified
- Number of Terminations: 5
- Drain to Source Voltage (Vdss): 200V
- Reach Compliance Code: unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Published: 1997
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.67mm
- Turn-Off Delay Time: 45 ns
- Height: 9.02mm
- Fall Time (Typ): 36 ns
- Pulsed Drain Current-Max (IDM): 72A
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Rise Time: 51ns
- Rds On (Max) @ Id, Vgs: 180m Ω @ 11A, 10V
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