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- Manufacturer No：IRF740ALPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF740ALPBF
- SKU：151043
- Description：MOSFET N-CH 400V 10A TO-262
User Guide
User Guide
IRF740ALPBF Details
MOSFET N-CH 400V 10A TO-262
IRF740ALPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Published: 2009
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Continuous Drain Current (ID): 10A
- Drain to Source Voltage (Vdss): 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 35ns
- Fall Time (Typ): 22 ns
- Length: 10.41mm
- Resistance: 550mOhm
- Power Dissipation: 3.1W
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Rds On Max: 550 mΩ
- Weight: 2.387001g
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Packaging: Tube
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Turn On Delay Time: 10 ns
- Vgs (Max): ±30V
- Height: 9.65mm
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn-Off Delay Time: 24 ns
- Drain to Source Resistance: 550mOhm
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Supplier Device Package: I2PAK
- Power Dissipation-Max: 3.1W Ta 125W Tc
- Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
- Input Capacitance: 1.03nF
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