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- Manufacturer No：IRFB13N50APBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB13N50APBF
- SKU：149807
- Description：MOSFET N-CH 500V 14A TO-220AB
User Guide
User Guide
IRFB13N50APBF Details
MOSFET N-CH 500V 14A TO-220AB
IRFB13N50APBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Packaging: Tube
- REACH SVHC: No SVHC
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 500V
- Dual Supply Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power Dissipation: 250W
- Vgs (Max): ±30V
- Length: 10.41mm
- Drain to Source Resistance: 450mOhm
- Nominal Vgs: 4 V
- Turn-Off Delay Time: 39 ns
- Current - Continuous Drain (Id) @ 25°C: 14A Tc
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Rds On Max: 450 mΩ
- Input Capacitance: 1.91nF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Width: 4.7mm
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 14A
- Resistance: 450mOhm
- Weight: 6.000006g
- Fall Time (Typ): 31 ns
- Power Dissipation-Max: 250W Tc
- Height: 9.01mm
- Rise Time: 39ns
- Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 8.4A, 10V
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