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- Manufacturer No：IRFR430ATRPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR430ATRPBF
- SKU：183102
- Description：MOSFET N-Chan 500V 5.0 Amp
User Guide
User Guide
IRFR430ATRPBF Details
MOSFET N-Chan 500V 5.0 Amp
IRFR430ATRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Max Operating Temperature: 150°C
- Published: 2014
- Continuous Drain Current (ID): 5A
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Threshold Voltage: 4.5V
- FET Type: N-Channel
- Length: 6.73mm
- Vgs (Max): ±30V
- Fall Time (Typ): 16 ns
- Power Dissipation: 110W
- Drain to Source Resistance: 1.7Ohm
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Turn On Delay Time: 8.7 ns
- Current - Continuous Drain (Id) @ 25°C: 5A Tc
- Rise Time: 27ns
- Input Capacitance: 490pF
- Height: 2.507mm
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 3
- Max Junction Temperature (Tj): 150°C
- Factory Lead Time: 11 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Width: 6.22mm
- Turn-Off Delay Time: 17 ns
- Resistance: 1.7Ohm
- Supplier Device Package: D-Pak
- Weight: 1.437803g
- Power Dissipation-Max: 110W Tc
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Rds On Max: 1.7 Ω
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
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