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- Manufacturer No：IRFB18N50K
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB18N50K
- SKU：144326
- Description：MOSFET N-CH 500V 17A TO-220AB
User Guide
User Guide
IRFB18N50K Details
MOSFET N-CH 500V 17A TO-220AB
IRFB18N50K Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.7mm
- Fall Time (Typ): 30 ns
- Continuous Drain Current (ID): 17A
- Rise Time: 60ns
- Turn On Delay Time: 22 ns
- Weight: 6.000006g
- Power Dissipation: 220W
- Height: 9.01mm
- Rds On Max: 290 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Factory Lead Time: 6 Weeks
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs (Max): ±30V
- Turn-Off Delay Time: 45 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Length: 10.41mm
- Drain to Source Resistance: 290mOhm
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Power Dissipation-Max: 220W Tc
- Input Capacitance: 2.83nF
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