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IRFBE30STRR123
  • Manufacturer No:
    IRFBE30STRR
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    268909
  • Description:
    MOSFET N-CH 800V 4.1A D2PAK
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IRFBE30STRR
  • Manufacturer No:
    IRFBE30STRR
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFBE30STRR
  • SKU:
    268909
  • Description:
    MOSFET N-CH 800V 4.1A D2PAK

IRFBE30STRR Details

MOSFET N-CH 800V 4.1A D2PAK

IRFBE30STRR Specification Parameters

  • Part Status: Active
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • RoHS Status: Non-RoHS Compliant
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Pbfree Code: no
  • JESD-609 Code: e0
  • Transistor Element Material: SILICON
  • Terminal Position: SINGLE
  • Terminal Finish: TIN LEAD
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: THROUGH-HOLE
  • DS Breakdown Voltage-Min: 800V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-source On Resistance-Max: 3Ohm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation-Max: 125W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Rds On (Max) @ Id, Vgs: 3 Ω @ 2.5A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Published: 1997
  • Vgs (Max): ±20V
  • Drain to Source Voltage (Vdss): 800V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • JESD-30 Code: R-PSFM-T3
  • Continuous Drain Current (ID): 4.1A
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A Tc

Excellent

Based on reviews

Excellent

Based on reviews

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