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- Manufacturer No：IRFD010PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD010PBF
- SKU：189767
- Description：MOSFET N-CH 50V 1.7A 4-DIP
User Guide
User Guide
IRFD010PBF Details
MOSFET N-CH 50V 1.7A 4-DIP
IRFD010PBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Drain to Source Voltage (Vdss): 50V
- Power Dissipation: 1W
- REACH SVHC: Unknown
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Threshold Voltage: 4V
- Factory Lead Time: 111 Weeks
- Turn-Off Delay Time: 12 ns
- Resistance: 200mOhm
- Fall Time (Typ): 23 ns
- Rds On Max: 200 mΩ
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 1.7A Tc
- Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Lead Free: Lead Free
- Part Status: Obsolete
- Packaging: Tube
- Drain to Source Breakdown Voltage: 50V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Published: 2000
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 1.7A
- Drain to Source Resistance: 200mOhm
- Package / Case: 4-DIP (0.300, 7.62mm)
- Input Capacitance: 250pF
- Rise Time: 33ns
- Power Dissipation-Max: 1W Tc
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
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