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- Manufacturer No：IRFU9120PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFU9120PBF
- SKU：188803
- Description：MOSFET P-CH 100V 5.6A I-PAK
User Guide
User Guide
IRFU9120PBF Details
MOSFET P-CH 100V 5.6A I-PAK
IRFU9120PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Voltage (Vdss): 100V
- Time@Peak Reflow Temperature-Max (s): 40
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 22A
- Subcategory: Other Transistors
- Length: 6.73mm
- FET Type: P-Channel
- Resistance: 600mOhm
- Height: 6.22mm
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ): 31 ns
- Drain to Source Breakdown Voltage: -100V
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Weight: 329.988449mg
- Power Dissipation-Max: 2.5W Ta 42W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Continuous Drain Current (ID): -5.6A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Published: 2008
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Width: 2.39mm
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Power Dissipation: 2.5W
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Lead Length: 9.65mm
- Additional Feature: AVALANCHE RATED
- Turn-Off Delay Time: 21 ns
- Voltage - Rated DC: -100V
- Rise Time: 47 ns
- Threshold Voltage: -4V
- Turn On Delay Time: 9.6 ns
- Current - Continuous Drain (Id) @ 25°C: 5.6A Tc
- Current Rating: -5.6A
- Rds On (Max) @ Id, Vgs: 600m Ω @ 3.4A, 10V
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