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- Manufacturer No：SI8429DB-T1-E1
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI8429DB-T1-E1
- SKU：333691
- Description：Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT
User Guide
User Guide
SI8429DB-T1-E1 Details
Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT
SI8429DB-T1-E1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Length: 1.6mm
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Terminal Form: UNSPECIFIED
- Drain to Source Voltage (Vdss): 8V
- Contact Plating: Copper, Silver, Tin
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Vgs (Max): ±5V
- Resistance: 35mOhm
- Drain to Source Breakdown Voltage: -8V
- Fall Time (Typ): 155 ns
- Height: 360μm
- Vgs(th) (Max) @ Id: 800mV @ 250μA
- Power Dissipation: 2.77W
- Continuous Drain Current (ID): -10.2A
- Current - Continuous Drain (Id) @ 25°C: 11.7A Tc
- Power Dissipation-Max: 2.77W Ta 6.25W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Gate to Source Voltage (Vgs): 5V
- Number of Terminations: 4
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Width: 1.6mm
- REACH SVHC: Unknown
- Terminal Position: BOTTOM
- Factory Lead Time: 33 Weeks
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 25A
- Subcategory: Other Transistors
- Rise Time: 25 ns
- Turn On Delay Time: 12 ns
- Series: TrenchFET?
- Drain Current-Max (Abs) (ID): 7.8A
- Turn-Off Delay Time: 260 ns
- Drive Voltage (Max Rds On,Min Rds On): 1.2V 4.5V
- Threshold Voltage: -600mV
- Package / Case: 4-XFBGA, CSPBGA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
- Rds On (Max) @ Id, Vgs: 35m Ω @ 1A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 4V
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