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- Manufacturer No：IRFPS37N50APBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPS37N50APBF
- SKU：192241
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 36A Tc 36A 446W 80ns
User Guide
User Guide
IRFPS37N50APBF Details
Tube Through Hole N-Channel Single Mosfet Transistor 36A Tc 36A 446W 80ns
IRFPS37N50APBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 500V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 130mOhm
- Fall Time (Typ): 80 ns
- Turn On Delay Time: 23 ns
- Length: 16.1mm
- Turn-Off Delay Time: 52 ns
- Current - Continuous Drain (Id) @ 25°C: 36A Tc
- Package / Case: TO-274AA
- Power Dissipation-Max: 446W Tc
- Power Dissipation: 446W
- Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 5.3mm
- Vgs (Max): ±30V
- Drain to Source Resistance: 130mOhm
- Continuous Drain Current (ID): 36A
- Height: 20.8mm
- Weight: 38.000013g
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Rds On Max: 130 mΩ
- Supplier Device Package: SUPER-247? (TO-274AA)
- Rise Time: 98ns
- Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
- Input Capacitance: 5.579nF
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