IRFU020PBFVishay Siliconix
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    IRFU020PBF123
    • Manufacturer No：
      IRFU020PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      191886
    • Description：
      MOSFET N-CH 60V 14A I-PAK
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    IRFU020PBF
    • Manufacturer No：
      IRFU020PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFU020PBF
    • SKU：
      191886
    • Description：
      MOSFET N-CH 60V 14A I-PAK

    User Guide

    User Guide

    IRFU020PBF Details

    MOSFET N-CH 60V 14A I-PAK

    IRFU020PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • DS Breakdown Voltage-Min: 60V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Length: 6.73mm
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Height: 6.22mm
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Pulsed Drain Current-Max (IDM): 56A
    • Additional Feature: FAST SWITCHING
    • Current - Continuous Drain (Id) @ 25°C: 14A Tc
    • Power Dissipation-Max: 2.5W Ta 42W Tc
    • Rds On (Max) @ Id, Vgs: 100m Ω @ 8.4A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Published: 2016
    • Drain to Source Voltage (Vdss): 60V
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Width: 2.39mm
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 25 ns
    • Continuous Drain Current (ID): 14A
    • Turn On Delay Time: 13 ns
    • Fall Time (Typ): 42 ns
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Rise Time: 58 ns
    • Weight: 329.988449mg
    • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
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