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- Manufacturer No：IRFZ10PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFZ10PBF
- SKU：257481
- Description：MOSFET N-CH 60V 10A TO-220AB
User Guide
User Guide
IRFZ10PBF Details
MOSFET N-CH 60V 10A TO-220AB
IRFZ10PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Width: 4.7mm
- JEDEC-95 Code: TO-220AB
- Rise Time: 50 ns
- Resistance: 200mOhm
- Length: 10.41mm
- Weight: 6.000006g
- Power Dissipation: 43W
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Power Dissipation-Max: 43W Tc
- Rds On (Max) @ Id, Vgs: 200m Ω @ 6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- DS Breakdown Voltage-Min: 60V
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Continuous Drain Current (ID): 10A
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Case Connection: DRAIN
- Turn On Delay Time: 10 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 13 ns
- Fall Time (Typ): 19 ns
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Avalanche Energy Rating (Eas): 47 mJ
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