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- Manufacturer No：IRLU110PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLU110PBF
- SKU：224064
- Description：MOSFET N-CH 100V 4.3A I-PAK
User Guide
User Guide
IRLU110PBF Details
MOSFET N-CH 100V 4.3A I-PAK
IRLU110PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 100V
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Threshold Voltage: 2V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- Length: 6.73mm
- Height: 6.22mm
- Continuous Drain Current (ID): 4.3A
- Fall Time (Typ): 17 ns
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Width: 2.38mm
- Weight: 329.988449mg
- Resistance: 540mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
- Rds On (Max) @ Id, Vgs: 540m Ω @ 2.6A, 5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Published: 2010
- Gate to Source Voltage (Vgs): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Power Dissipation: 2.5W
- Additional Feature: AVALANCHE RATED
- Turn-Off Delay Time: 16 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Vgs (Max): ±10V
- Rise Time: 47 ns
- Turn On Delay Time: 9.3 ns
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Power Dissipation-Max: 2.5W Ta 25W Tc
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
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