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- Manufacturer No：SI1031R-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1031R-T1-GE3
- SKU：230523
- Description：MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V
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User Guide
SI1031R-T1-GE3 Details
MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V
SI1031R-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Published: 2016
- REACH SVHC: No SVHC
- Power Dissipation: 250mW
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Length: 1.58mm
- Subcategory: Other Transistors
- Height: 700μm
- Fall Time (Typ): 30 ns
- Turn-Off Delay Time: 60 ns
- Turn On Delay Time: 55 ns
- Width: 760μm
- Vgs(th) (Max) @ Id: 1.2V @ 250μA
- Vgs (Max): ±6V
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 140mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Gate to Source Voltage (Vgs): 6V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 140mA
- Resistance: 8Ohm
- FET Type: P-Channel
- Rise Time: 30 ns
- Threshold Voltage: 900mV
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
- Additional Feature: LOW THRESHOLD
- Power Dissipation-Max: 250mW Ta
- Package / Case: SC-75A
- Rds On (Max) @ Id, Vgs: 8 Ω @ 150mA, 4.5V
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