SI3424BDV-T1-GE3Vishay Siliconix
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    SI3424BDV-T1-GE3123
    • Manufacturer No：
      SI3424BDV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      332814
    • Description：
      MOSFET N-CH 30V 8A 6TSOP
    • Quantity：
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    Inventory:11445
    • Qty Unit Price price
    • 1 $872.028 $872.028
    • 10 $863.394 $8633.94
    • 100 $854.845 $85484.5
    • 1000 $846.381 $846381
    • 10000 $838 $8380000

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    SI3424BDV-T1-GE3
    • Manufacturer No：
      SI3424BDV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI3424BDV-T1-GE3
    • SKU：
      332814
    • Description：
      MOSFET N-CH 30V 8A 6TSOP

    User Guide

    User Guide

    SI3424BDV-T1-GE3 Details

    MOSFET N-CH 30V 8A 6TSOP

    SI3424BDV-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2013
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Drain Current-Max (Abs) (ID): 7A
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Length: 3.05mm
    • Fall Time (Typ): 12 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Resistance: 28mOhm
    • Current - Continuous Drain (Id) @ 25°C: 8A Tc
    • Rds On (Max) @ Id, Vgs: 28m Ω @ 7A, 10V
    • Power Dissipation-Max: 2.1W Ta 2.98W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Height: 1mm
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Continuous Drain Current (ID): 7A
    • Vgs (Max): ±20V
    • Width: 1.65mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Turn On Delay Time: 18 ns
    • Turn-Off Delay Time: 17 ns
    • Rise Time: 85 ns
    • Weight: 19.986414mg
    • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 15V
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