SI1467DH-T1-E3Vishay Siliconix
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    SI1467DH-T1-E3123
    • Manufacturer No：
      SI1467DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      257105
    • Description：
      MOSFET 20V 2.7A 2.78W 90mohm @ 4.5V
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    • Qty Unit Price price
    • 1 $0.668 $0.668
    • 10 $0.661 $6.61
    • 100 $0.654 $65.4
    • 1000 $0.647 $647

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    SI1467DH-T1-E3
    • Manufacturer No：
      SI1467DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1467DH-T1-E3
    • SKU：
      257105
    • Description：
      MOSFET 20V 2.7A 2.78W 90mohm @ 4.5V

    User Guide

    User Guide

    SI1467DH-T1-E3 Details

    MOSFET 20V 2.7A 2.78W 90mohm @ 4.5V

    SI1467DH-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Drain Current-Max (Abs) (ID): 3A
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Length: 2mm
    • Element Configuration: Single
    • Drain to Source Voltage (Vdss): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Power Dissipation: 1.5W
    • Gate to Source Voltage (Vgs): 8V
    • FET Type: P-Channel
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Resistance: 90mOhm
    • Series: TrenchFET?
    • Vgs (Max): ±8V
    • Turn-Off Delay Time: 36 ns
    • Rise Time: 43ns
    • Current - Continuous Drain (Id) @ 25°C: 2.7A Tc
    • Power Dissipation-Max: 1.5W Ta 2.78W Tc
    • Rds On (Max) @ Id, Vgs: 90m Ω @ 2A, 4.5V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Published: 2016
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Height: 1mm
    • Width: 1.25mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: Other Transistors
    • Continuous Drain Current (ID): 2.7A
    • Drain to Source Breakdown Voltage: -20V
    • Turn On Delay Time: 16 ns
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Fall Time (Typ): 43 ns
    • Weight: 7.512624mg
    • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
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