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- Manufacturer No：SI3465DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3465DV-T1-GE3
- SKU：333594
- Description：MOSFET 20V 4.0A 2.0W 80mohm @ 10V
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User Guide
SI3465DV-T1-GE3 Details
MOSFET 20V 4.0A 2.0W 80mohm @ 10V
SI3465DV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Drain Current-Max (Abs) (ID): 3A
- Published: 2016
- Number of Pins: 6
- Reach Compliance Code: unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain-source On Resistance-Max: 0.08Ohm
- Power Dissipation: 1.14W
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Continuous Drain Current (ID): 3A
- Number of Terminations: 6
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Factory Lead Time: 15 Weeks
- Drain to Source Breakdown Voltage: 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 3A Ta
- Power Dissipation-Max: 1.14W Ta
- Rds On (Max) @ Id, Vgs: 80m Ω @ 4A, 10V
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