Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:14514
- Qty Unit Price price
- 1 $0.762 $0.762
- 10 $0.754 $7.54
- 100 $0.746 $74.6
- 1000 $0.738 $738
- 10000 $0.73 $7300
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI3590DV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI3590DV-T1-E3
- SKU：331323
- Description：MOSFET N&P-CH 30V (D-S)
User Guide
User Guide
SI3590DV-T1-E3 Details
MOSFET N&P-CH 30V (D-S)
SI3590DV-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Width: 1.65mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 15 ns
- Turn On Delay Time: 5 ns
- FET Feature: Logic Level Gate
- Resistance: 170mOhm
- FET Type: N and P-Channel
- Max Power Dissipation: 830mW
- Weight: 19.986414mg
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 2.5A 1.7A
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Drain to Source Breakdown Voltage: 30V
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 2.5A
- Subcategory: Other Transistors
- Length: 3.05mm
- Fall Time (Typ): 15 ns
- Turn-Off Delay Time: 20 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Power Dissipation: 830mW
- Nominal Vgs: 600 mV
- Rds On (Max) @ Id, Vgs: 77m Ω @ 3A, 4.5V
- Base Part Number: SI3590
Search for similar products
SI3590DV-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI3590DV-T1-E3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
