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- Manufacturer No：SI4423DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4423DY-T1-GE3
- SKU：251383
- Description：MOSFET P-CH 20V 10A 8-SOIC
User Guide
User Guide
SI4423DY-T1-GE3 Details
MOSFET P-CH 20V 10A 8-SOIC
SI4423DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Gate to Source Voltage (Vgs): 8V
- Height: 1.55mm
- Drain to Source Breakdown Voltage: -20V
- Vgs (Max): ±8V
- Weight: 506.605978mg
- Fall Time (Typ): 165 ns
- Current - Continuous Drain (Id) @ 25°C: 10A Ta
- Continuous Drain Current (ID): -10A
- Vgs(th) (Max) @ Id: 900mV @ 600μA
- Rds On (Max) @ Id, Vgs: 7.5m Ω @ 14A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2009
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Turn On Delay Time: 75 ns
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Rise Time: 165 ns
- Power Dissipation-Max: 1.5W Ta
- Drain-source On Resistance-Max: 0.0075Ohm
- Turn-Off Delay Time: 460 ns
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 5V
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