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- Manufacturer No：SI4170DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4170DY-T1-GE3
- SKU：249897
- Description：MOSFET N-CH 30V 30A 8-SOIC
User Guide
User Guide
SI4170DY-T1-GE3 Details
MOSFET N-CH 30V 30A 8-SOIC
SI4170DY-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Published: 2013
- Length: 5mm
- Drain to Source Voltage (Vdss): 30V
- Power Dissipation: 3W
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 30A
- Vgs (Max): ±20V
- Fall Time (Typ): 20 ns
- Series: TrenchFET?
- Weight: 540.001716mg
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Rise Time: 17ns
- Vgs(th) (Max) @ Id: 2.6V @ 250μA
- Power Dissipation-Max: 3W Ta 6W Tc
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Max Operating Temperature: 150°C
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Height: 1.5mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 45 ns
- Supplier Device Package: 8-SO
- Turn On Delay Time: 36 ns
- Drain to Source Resistance: 3.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Rds On Max: 3.5 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 15V
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