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- Manufacturer No：SI4421DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4421DY-T1-GE3
- SKU：259303
- Description：MOSFET P-CH 20V 10A 8-SOIC
User Guide
User Guide
SI4421DY-T1-GE3 Details
MOSFET P-CH 20V 10A 8-SOIC
SI4421DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Turn On Delay Time: 45 ns
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Terminal Finish: PURE MATTE TIN
- Weight: 186.993455mg
- Current - Continuous Drain (Id) @ 25°C: 10A Ta
- Continuous Drain Current (ID): -14A
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Published: 2015
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- DS Breakdown Voltage-Min: 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Gate to Source Voltage (Vgs): 8V
- Height: 1.55mm
- Rise Time: 90 ns
- Vgs (Max): ±8V
- Turn-Off Delay Time: 350 ns
- Fall Time (Typ): 170 ns
- Power Dissipation-Max: 1.5W Ta
- Threshold Voltage: -800mV
- Vgs(th) (Max) @ Id: 800mV @ 850μA
- Rds On (Max) @ Id, Vgs: 8.75m Ω @ 14A, 4.5V
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