SI4850EY-T1-E3Vishay Siliconix
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    SI4850EY-T1-E3123
    • Manufacturer No：
      SI4850EY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      282617
    • Description：
      Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
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    Inventory:9838
    • Qty Unit Price price
    • 1 $2470.397 $2470.397
    • 10 $2445.937 $24459.37
    • 100 $2421.719 $242171.9
    • 1000 $2397.741 $2397741
    • 10000 $2374 $23740000

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    SI4850EY-T1-E3
    • Manufacturer No：
      SI4850EY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4850EY-T1-E3
    • SKU：
      282617
    • Description：
      Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

    User Guide

    User Guide

    SI4850EY-T1-E3 Details

    Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

    SI4850EY-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2016
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 60V
    • Time@Peak Reflow Temperature-Max (s): 40
    • Factory Lead Time: 14 Weeks
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Current: 6A
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Fall Time (Typ): 10 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Continuous Drain Current (ID): 8.5A
    • Subcategory: FET General Purpose Powers
    • Weight: 506.605978mg
    • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
    • Power Dissipation-Max: 1.7W Ta
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Voltage - Rated DC: 60V
    • Voltage: 60V
    • Threshold Voltage: 3V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Width: 4mm
    • Height: 1.75mm
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Turn On Delay Time: 10 ns
    • Rise Time: 10 ns
    • Turn-Off Delay Time: 25 ns
    • Series: TrenchFET?
    • Resistance: 22mOhm
    • Power Dissipation: 1.7W
    • Nominal Vgs: 1 V
    • Current - Continuous Drain (Id) @ 25°C: 6A Ta
    • Rds On (Max) @ Id, Vgs: 22m Ω @ 6A, 10V
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