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- Manufacturer No：SI4858DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4858DY-T1-GE3
- SKU：261212
- Description：MOSFET N-CH 30V 13A 8-SOIC
User Guide
User Guide
SI4858DY-T1-GE3 Details
MOSFET N-CH 30V 13A 8-SOIC
SI4858DY-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 21 ns
- Power Dissipation-Max: 1.6W Ta
- Current - Continuous Drain (Id) @ 25°C: 13A Ta
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 5.25m Ω @ 20A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Continuous Drain Current (ID): 13A
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Series: TrenchFET?
- Fall Time (Typ): 27 ns
- Turn-Off Delay Time: 83 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Drain-source On Resistance-Max: 0.00525Ohm
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