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- Manufacturer No：SI4943CDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4943CDY-T1-GE3
- SKU：251011
- Description：MOSFET 2P-CH 20V 8A 8-SOIC
User Guide
User Guide
SI4943CDY-T1-GE3 Details
MOSFET 2P-CH 20V 8A 8-SOIC
SI4943CDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Published: 2017
- Drain Current-Max (Abs) (ID): 8A
- Transistor Application: SWITCHING
- Height: 1.5mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id: 3V @ 250μA
- FET Feature: Logic Level Gate
- Turn-Off Delay Time: 29 ns
- Max Power Dissipation: 3.1W
- Threshold Voltage: -1V
- Weight: 186.993455mg
- Rise Time: 71 ns
- Resistance: 19.2mOhm
- Rds On (Max) @ Id, Vgs: 19.2m Ω @ 8.3A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID): 8A
- Operating Mode: ENHANCEMENT MODE
- Turn On Delay Time: 50 ns
- Fall Time (Typ): 15 ns
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- FET Type: 2 P-Channel (Dual)
- Power - Max: 3.1W
- Terminal Finish: PURE MATTE TIN
- Operating Temperature: -50°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Base Part Number: SI4943
- Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
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