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- Manufacturer No：SI5904DC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI5904DC-T1-E3
- SKU：292897
- Description：Trans MOSFET N-CH 20V 3.1A 8-Pin Chip FET T/R
User Guide
User Guide
SI5904DC-T1-E3 Details
Trans MOSFET N-CH 20V 3.1A 8-Pin Chip FET T/R
SI5904DC-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Dual
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 12 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Max Power Dissipation: 1.1W
- Resistance: 75mOhm
- Subcategory: FET General Purpose Powers
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Rds On (Max) @ Id, Vgs: 75m Ω @ 3.1A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 8
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Threshold Voltage: 1.5V
- Terminal Form: C BEND
- Fall Time (Typ): 35 ns
- Rise Time: 35ns
- Continuous Drain Current (ID): 3.1A
- FET Type: 2 N-Channel (Dual)
- Power Dissipation: 1.1W
- Turn-Off Delay Time: 19 ns
- Package / Case: 8-SMD, Flat Lead
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Base Part Number: SI5904
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