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- Manufacturer No：SI5935CDC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI5935CDC-T1-E3
- SKU：282227
- Description：MOSFET 2P-CH 20V 4A 1206-8
User Guide
User Guide
SI5935CDC-T1-E3 Details
MOSFET 2P-CH 20V 4A 1206-8
SI5935CDC-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Drain Current-Max (Abs) (ID): 4A
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Width: 1.65mm
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 25 ns
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- Fall Time (Typ): 32 ns
- Drain-source On Resistance-Max: 0.1Ohm
- FET Type: 2 P-Channel (Dual)
- Terminal Finish: PURE MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Base Part Number: SI5935
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Published: 2012
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- FET Feature: Standard
- Operating Temperature: -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C: 4A
- Height: 1.1mm
- Gate to Source Voltage (Vgs): 8V
- Subcategory: Other Transistors
- Length: 3.05mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Power Dissipation: 1.3W
- Continuous Drain Current (ID): 3.1A
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Rise Time: 32 ns
- Package / Case: 8-SMD, Flat Lead
- Max Power Dissipation: 3.1W
- Weight: 84.99187mg
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
- Rds On (Max) @ Id, Vgs: 100m Ω @ 3.1A, 4.5V
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