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SI6459BDQ-T1-GE3123
  • Manufacturer No:
    SI6459BDQ-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    293326
  • Description:
    MOSFET 60V 2.7A 1.5W 115mohm @ 10V
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SI6459BDQ-T1-GE3
  • Manufacturer No:
    SI6459BDQ-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI6459BDQ-T1-GE3
  • SKU:
    293326
  • Description:
    MOSFET 60V 2.7A 1.5W 115mohm @ 10V

SI6459BDQ-T1-GE3 Details

MOSFET 60V 2.7A 1.5W 115mohm @ 10V

SI6459BDQ-T1-GE3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Part Status: Obsolete
  • Published: 2013
  • Power Dissipation: 1W
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Width: 4.4mm
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 15ns
  • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
  • Series: TrenchFET?
  • Drain to Source Breakdown Voltage: -60V
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Weight: 157.991892mg
  • Continuous Drain Current (ID): -2.7A
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.7A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Drain to Source Voltage (Vdss): 60V
  • Max Operating Temperature: 150°C
  • Height: 1mm
  • Length: 3mm
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Turn-Off Delay Time: 50 ns
  • Fall Time (Typ): 15 ns
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Supplier Device Package: 8-TSSOP
  • Power Dissipation-Max: 1W Ta
  • Drain to Source Resistance: 115mOhm
  • Current - Continuous Drain (Id) @ 25°C: 2.2A Ta
  • Rds On Max: 115 mΩ

Excellent

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Excellent

Based on reviews

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