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- Manufacturer No：SI6954ADQ-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI6954ADQ-T1-E3
- SKU：261712
- Description：MOSFET 30V 3.4A 1W
User Guide
User Guide
SI6954ADQ-T1-E3 Details
MOSFET 30V 3.4A 1W
SI6954ADQ-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Length: 3mm
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Transistor Application: SWITCHING
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- FET Feature: Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C: 3.1A
- FET Type: 2 N-Channel (Dual)
- Nominal Vgs: 1 V
- Power Dissipation: 830mW
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Height: 1mm
- Drain to Source Breakdown Voltage: 30V
- Published: 2017
- Threshold Voltage: 1V
- Width: 4.4mm
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10 ns
- Turn On Delay Time: 12 ns
- Continuous Drain Current (ID): 3.4A
- Drain Current-Max (Abs) (ID): 3.1A
- Series: TrenchFET?
- Turn-Off Delay Time: 23 ns
- Max Power Dissipation: 830mW
- Resistance: 53mOhm
- Weight: 157.991892mg
- Base Part Number: SI6954
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