SI7194DP-T1-GE3
Vishay Siliconix
RoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Channels
1Radiation Hardening
NoMin Operating Temperature
-55°CPart Status
ObsoleteNumber of Pins
8Max Operating Temperature
150°CDrain to Source Voltage (Vdss)
25VDrain to Source Breakdown Voltage
25VPublished
2005Factory Lead Time
15 WeeksGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelLength
4.9mmTechnology
MOSFET (Metal Oxide)Vgs (Max)
±20VContinuous Drain Current (ID)
60ADrive Voltage (Max Rds On,Min Rds On)
4.5V 10VFall Time (Typ)
40 nsRise Time
25nsDrain to Source Resistance
2MOhmSeries
TrenchFET?Height
1.04mmPackage / Case
PowerPAK? SO-8Supplier Device Package
PowerPAK? SO-8Weight
506.605978mgTurn On Delay Time
46 nsCurrent - Continuous Drain (Id) @ 25°C
60A TcWidth
5.89mmTurn-Off Delay Time
72 nsVgs(th) (Max) @ Id
2.6V @ 250μAGate Charge (Qg) (Max) @ Vgs
145nC @ 10VPower Dissipation-Max
5.4W Ta 83W TcRds On Max
2 mΩRds On (Max) @ Id, Vgs
2mOhm @ 20A, 10VInput Capacitance (Ciss) (Max) @ Vds
6590pF @ 15V