SIR892DP-T1-GE3Vishay Siliconix
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    SIR892DP-T1-GE3123
    • Manufacturer No：
      SIR892DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      337694
    • Description：
      MOSFET N-CH 25V 50A PPAK SO-8
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    SIR892DP-T1-GE3
    • Manufacturer No：
      SIR892DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIR892DP-T1-GE3
    • SKU：
      337694
    • Description：
      MOSFET N-CH 25V 50A PPAK SO-8

    User Guide

    User Guide

    SIR892DP-T1-GE3 Details

    MOSFET N-CH 25V 50A PPAK SO-8

    SIR892DP-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Pin Count: 8
    • Published: 2013
    • Number of Terminations: 5
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Length: 4.9mm
    • Drain Current-Max (Abs) (ID): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 50A
    • Case Connection: DRAIN
    • Fall Time (Typ): 25 ns
    • Threshold Voltage: 2.6V
    • Pulsed Drain Current-Max (IDM): 70A
    • Series: TrenchFET?
    • Height: 1.04mm
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • JESD-30 Code: R-XDSO-C5
    • Vgs(th) (Max) @ Id: 2.6V @ 250μA
    • Input Capacitance (Ciss) (Max) @ Vds: 2645pF @ 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Drain to Source Breakdown Voltage: 25V
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Power Dissipation: 5W
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Terminal Form: C BEND
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 30 ns
    • Turn-Off Delay Time: 40 ns
    • Rise Time: 18 ns
    • Subcategory: FET General Purpose Powers
    • Package / Case: PowerPAK? SO-8
    • Weight: 506.605978mg
    • Width: 5.89mm
    • Resistance: 3.2mOhm
    • Power Dissipation-Max: 5W Ta 50W Tc
    • Rds On (Max) @ Id, Vgs: 3.2m Ω @ 10A, 10V
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