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- Manufacturer No：SI7270DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7270DP-T1-GE3
- SKU：279458
- Description：VISHAY SI7270DP-T1-GE3 Dual MOSFET, Dual N Channel, 8 A, 30 V, 0.0175 ohm, 10 V, 1.2 V
User Guide
User Guide
SI7270DP-T1-GE3 Details
VISHAY SI7270DP-T1-GE3 Dual MOSFET, Dual N Channel, 8 A, 30 V, 0.0175 ohm, 10 V, 1.2 V
SI7270DP-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Number of Terminations: 6
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Drain Current-Max (Abs) (ID): 8A
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 8 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Power Dissipation: 3.6W
- Package / Case: PowerPAK? SO-8 Dual
- Max Power Dissipation: 17.8W
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Part Status: Obsolete
- Pin Count: 8
- REACH SVHC: No SVHC
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 13 Weeks
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Threshold Voltage: 1.2V
- Continuous Drain Current (ID): 8A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 35A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 8 ns
- Turn-Off Delay Time: 18 ns
- FET Type: 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- JESD-30 Code: R-PDSO-C6
- Rds On (Max) @ Id, Vgs: 21m Ω @ 8A, 10V
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