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- Manufacturer No：SI7454CDP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7454CDP-T1-GE3
- SKU：263053
- Description：Trans MOSFET N-CH 100V 8.1A 8-Pin PowerPAK SO T/R
User Guide
User Guide
SI7454CDP-T1-GE3 Details
Trans MOSFET N-CH 100V 8.1A 8-Pin PowerPAK SO T/R
SI7454CDP-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Gate to Source Voltage (Vgs): 20V
- Threshold Voltage: 1.2V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- Rise Time: 12ns
- Turn-Off Delay Time: 17 ns
- Package / Case: PowerPAK? SO-8
- JESD-30 Code: R-XDSO-C5
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Drain to Source Voltage (Vdss): 100V
- Published: 2011
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 22A
- Pulsed Drain Current-Max (IDM): 40A
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Power Dissipation: 4.1W
- Current - Continuous Drain (Id) @ 25°C: 22A Tc
- Drain-source On Resistance-Max: 0.0305Ohm
- Power Dissipation-Max: 4.1W Ta 29.7W Tc
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